The HYPA02000600P45H from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 2000 to 6000 MHz. It provides an output power of 45 dBm (30 W),PAE of 40% and has a power gain of 27 dB under 28V power supply. It can provides more than 15 dBc haomonic suppression at saturated point.This amplifier is designed using GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology.All specs are tested under CW Mode