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2~6.5GHz 30W GaN MMIC
Category：Semiconductors/MMICs/ICs
Publish Date：2024-11-15
Views：49次
Intro：The HYPA02000650P45 from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 2000 to 6500 MHz. It provides an output power of 45 dBm (30 W),PAE of 35% and has a power gain of 22 dB under 28V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors
The HYPA02000650P45 from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 2000 to 6500 MHz. It provides an output power of 45 dBm (30 W),PAE of 35% and has a power gain of 22 dB under 28V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology.All specs are tested under CW Mode
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