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4~8GHz 120W GaN MMIC
Category：Semiconductors/MMICs/ICs
Publish Date：2024-11-15
Views：86次
Intro：The HYPA04000800P51P from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 4000 to 8000 MHz. It provides an output power of 51 dBm (12 W),PAE of 35% and has a power gain of 24 dB under 40V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors
The HYPA04000800P51P from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 4000 to 8000 MHz. It provides an output power of 51 dBm (12 W),PAE of 35% and has a power gain of 24 dB under 40V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology.All specs are tested under Pulse Mode
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