The HYPA02001800P41 from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 2000 to 18000 MHz. It provides an output power of 41 dBm (12 W),PAE of 17% and has a power gain of 14 dB under 32V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology.All specs are tested under CW Mode